The tasks are growth of group III nitride semiconductor materials and devices by means of metal-organic vapor phase epitaxy (MOVPE) and their structural, optical and electrical characterization. The development focuses on AlGaN-based LEDs and laser diodes emitting in the ultraviolet spectral range. The work is part of a BMBF funded project within the consortium "Advanced UV for Life". The tasks include the operation and maintenance of the MOVPE system well as the planning and implementation of experiments for improving the layer properties and the heterostructure design. Characterization of the grown semiconductor heterostructures by means of atomic force microscopy, high-resolution X-ray diffraction, Hall effect, transmission spectroscopy and the devices by electroluminescence spectroscopy and photoluminescence spectroscopy as well as evaluation of the acquired data is necessary. Further characterization and the fabrication of mountable LED chips are carried out in close cooperation with national and international partners. The opportunity to persue a dissertation in the field of physics is given.
Successfully completed university degree (Master, Diplom or equivalent) in physics, materials science or electrical engineering; very good grades desired. A good knowledge of solid state and semiconductor physics, in particular epitaxy and semiconductor devices is required. Applicants should also have a strong interest in experimental work and the evaluation of complex data sets. The cooperation within the team and with external partners for the analysis of semiconductor materials, the simulation of electro-optical properties, and device fabrication requires very good communication skills. Experience with MOVPE, characterization methods such as atomic force microscopy, high-resolution X-ray diffraction, Hall measurements and the electro-optical characterization of devices is desirable. In addition, applicants should have a strong interest in publishing scientific results in international journals and presenting their results to national and international audiences. Good English language skills are desired.
How to apply:
Please send your written application with the reference number and the usual documents to Technische Universität Berlin - Der Präsident - Fakultät II, Institut für Festkörperphysik, Prof. Dr. Kneissl, Sekr. EW 6-1, Hardenbergstr. 36, 10623 Berlin or by e-mail to firstname.lastname@example.org.
To ensure equal opportunities between women and men, applications by women with the required qualifications are explicitly desired.
Qualified individuals with disabilities will be favored. The TU Berlin values the diversity of its members and is committed to the goals of equal opportunities.
Please send copies only. Original documents will not be returned.